Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films

ABSTRACT

The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 15/166,328, filed May 27, 2016, claims benefit ofU.S. Provisional Patent Application Ser. No. 62/171,751, filed Jun. 5,2015, and U.S. Provisional Patent Application Ser. No. 62/190,120, filedJul. 8, 2015, which are herein incorporated by reference.

BACKGROUND Field

Embodiments of the disclosure generally relate to seasoning films forprocess chambers, such as semiconductor process chambers, and methods ofapplying and using the same.

Description of the Related Art

One aspect for next generation devices is to achieve higher throughputand better device yield and performance from each silicon substrateprocessed. Future generations of NAND and DRAM device have increasingmulti-stacks of oxynitride depositions which results in incomingsubstrates with a bow of greater than ±200 um. Without sufficientclamping force to flatten substrates during film deposition, it becomesdifficult to achieve uniformity in film properties such as bevelcoverage, thickness, and etch selectivity.

It is possible to remove the bow from substrates via electrostaticchucking, which improves film property uniformity. However, theelectrostatic chucking of substrates is often affected by seasoninglayers applied within a processing chamber to protect processing chambercomponents. One example of a seasoning film is boron-containing carbonfilms. While the boron-containing carbon films facilitate electrostaticchucking, the boron-containing carbon films flake easily and result inparticle contamination on substrates. Another example of a seasoninglayer is amorphous boron films. Amorphous boron films have decreasedflaking as compared to boron-containing carbon films. However, theamorphous boron films have relatively high leakage currents andtherefore negatively affect the electrostatic chucking of bowedsubstrates.

Therefore, there is a need for an improved processing chamber seasoninglayer which provides adequate particle and chucking performance.

SUMMARY

The present disclosure generally relates to processing chamber seasoninglayers having a graded composition. In one example, the seasoning layeris a boron-carbon-nitride (BCN) film. The BCN film may have a greatercomposition of boron at the base of the film. As the BCN film isdeposited, the boron concentration may approach zero, while the relativecarbon and nitrogen concentration increases. The BCN film may bedeposited by initially coflowing a boron precursor, a carbon precursor,and a nitrogen precursor. After a first period of time, the flow rate ofthe boron precursor may be tapered to zero. As the flow rate of boronprecursor is reduced, RF power may be applied to generate a plasmaregion during deposition of the seasoning layer.

In one embodiment, a method of depositing a seasoning layer comprisesintroducing a boron precursor, a nitrogen precursor, and a carbonprecursor into a processing chamber for a first time period. Anamorphous boron base portion of a boron-carbon-nitrogen seasoning layeris formed during the first time period. The flow rate of the boronprecursor is tapered during a second time period. A top portion of theboron-carbon-nitrogen seasoning layer is deposited on the base portionduring the second time period. The top portion has a tapered boronconcentration profile.

In another embodiment, a method of chucking a substrate comprisesforming a seasoning layer within a process chamber. Forming theseasoning layer comprises introducing a boron precursor, a nitrogenprecursor, and a carbon precursor into a processing chamber for a firsttime period. An amorphous boron base portion of a boron-carbon-nitrogenseasoning layer is formed during the first time period. The flow rate ofthe boron precursor is tapered during a second time period. A topportion of the boron-carbon-nitrogen seasoning layer is deposited on thebase portion during the second time period. The top portion has atapered boron concentration profile. A substrate is positioned on asupport including an electrostatic chuck within the processing chamber,and power is applied to the support to electrostatically chuck thesubstrate to the support.

In another embodiment, a seasoning layer comprises aboron-carbon-nitrogen film, wherein the boron-carbon-nitrogen film has abase portion with a uniform boron concentration, and a top portion witha tapered boron concentration.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlyexemplary embodiments and are therefore not to be considered limiting ofits scope, and the disclosure may admit to other equally effectiveembodiments.

FIG. 1A is a schematic view of a processing chamber in which a seasoninglayer of the present disclosure may be deposited. FIG. 1B is an enlargedpartial view of the substrate support assembly of the processing chamberof FIG. 1A.

FIG. 2 illustrates a sectional view of a seasoning layer, according toone embodiment of the disclosure.

FIG. 3 is a flow a diagram of a method for depositing a seasoning layer,according to one embodiment of the disclosure.

FIG. 4A illustrates a graph of a flow rate of a boron-containingprecursor gas during deposition of a seasoning layer, according to oneembodiment of the disclosure.

FIG. 4B illustrates a graph of the application of RF power duringdeposition of a seasoning layer, according to one embodiment of thedisclosure.

FIG. 5 comparatively illustrates the particle performance of a seasoninglayer of the present disclosure versus conventional seasoning layers.

FIGS. 6A and 6B comparatively illustrate chucking performance of aseasoning layer of the present disclosure versus conventional seasoninglayers.

FIG. 7A illustrates a substrate processed in a processing chamberseasoned with a conventional seasoning layer. FIG. 7B illustrates asubstrate processed in a processing chamber seasoned with a seasoninglayer of the present disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

The present disclosure generally relates to processing chamber seasoninglayers having a graded composition. In one example, the seasoning layeris a boron-carbon-nitride (BCN) film. The BCN film may have a greatercomposition of boron at the base of the film. As the BCN film isdeposited, the boron concentration may approach zero, while the relativecarbon and nitrogen concentration increases. The BCN film may bedeposited by initially co-flowing a boron precursor, a carbon precursor,and a nitrogen precursor. After a first period of time, the flow rate ofthe boron precursor may be tapered to zero. As the flow rate of boronprecursor is reduced, RF power may be applied to generate a plasmaregion during deposition of the seasoning layer.

FIG. 1A is a schematic sectional view of a processing chamber 100 inwhich a seasoning layer of the present disclosure may be deposited. Theprocessing chamber 100 includes a substrate support assembly 101 onwhich a substrate 102 is processed. The processing chamber 100 may be achemical vapor deposition (CVD) processing chamber, a hot wire chemicalvapor deposition (HWCVD) processing chamber, an etch chamber, or anothervacuum chamber for processing substrates.

The processing chamber 100 includes a chamber body 103 having a top 104,chamber sidewalls 105, and a chamber bottom 106 which are coupled to aground 145. The top 104, the chamber sidewalls 105, and the chamberbottom 106 define an interior processing region 107. The chambersidewalls 105 may include a substrate transfer port 108 to facilitatetransferring the substrate 102 into and out of the processing chamber100. The substrate transfer port 108 may be coupled to a transferchamber and/or other chambers of a substrate processing system.

The dimensions of the chamber body 103 and related components of theprocessing chamber 100 are not limited and generally are proportionallylarger than the size of the substrate 102 to be processed therein.Examples of substrate sizes include 200 mm diameter, 250 mm diameter,300 mm diameter and 450 mm diameter, among others.

In one embodiment, a pumping device 109 is coupled to the bottom 106 ofthe processing chamber 100 to evacuate and control the pressure with theprocessing chamber 100. The pumping device 109 may be a conventionalroughing pump, roots blower, turbo pump or other similar device that isadapted to control the pressure in the interior processing region 107.In one example, the pressure level of the interior processing region 107of the processing chamber 100 may be maintained at less than about 760Torr.

A gas panel 110 supplies process, precursor gases, and other gasesthrough a gas line 111 into the interior processing region 107 of thechamber body 103. The gas panel 110 may be configured to provide one ormore process gas sources, cleaning gases, inert gases, non-reactivegases, and reactive gases, if desired. A showerhead 112 is disposedbelow the top 104 of the processing chamber 100 and is spaced above thesubstrate support assembly 101. As such, the showerhead 112 is above thesubstrate 102 when the substrate 102 is positioned on the substratesupport assembly 101 for processing. One or more process gases providedfrom the gas panel 110 may supply reactive species through theshowerhead 112 into the interior processing region 107. The showerhead112 also functions as an electrode for coupling power to gases withinthe interior processing region 107, for example, for generating ionizedspecies from the gases. It is contemplated that power may be coupled tothe gases within the interior processing region 107 utilizing otherelectrodes or devices.

A power supply 113 may be coupled through a match circuit 114 to theshowerhead 112. In one example, the power supply 113 may supply highfrequency RF energy to the showerhead 112. The energy applied to theshowerhead 112 from the power supply 113 is inductively coupled to theprocess gases disposed in the interior processing region 107 to maintaina plasma region in the processing chamber 100. Alternatively, or inaddition to the power supply 113, power may be capacitively coupled tothe process gases in the processing region 107 to maintain the plasmawithin the processing region 107. The operation of the power supply 113may be controlled by a controller, (not shown), that also controls theoperation of other components in the processing chamber 100.

FIG. 1B is an enlarged partial view of the substrate support assembly101 of the processing chamber 100 of FIG. 1A. The substrate supportassembly 101 includes an electrostatic chuck (ESC) 115 for chucking thesubstrate 102 disposed thereon. The ESC 115 secures the substrate 102 tothe substrate support assembly 101 during processing. The ESC 115 may beformed from a dielectric material, for example a ceramic material, suchas aluminum nitride (AlN) among other suitable materials. The ESC 115uses the electrostatic attraction to hold the substrate 102 to thesubstrate support assembly 101.

The ESC 115 includes a chucking electrode 116 connected to a powersource 117 through an isolation transformer 118 disposed between thepower source 117 and the chucking electrode 116. The isolationtransformer 118 may optionally be part of the power source 117. Thepower source 117 may apply a chucking voltage between about 50 Volts andabout 5000 Volts to the chucking electrode 116. Optionally, thesubstrate support assembly 101 may include one or more of a heater 119having a heating element 161 coupled to a power supply 162, a coolingbase (not shown) or a facility plate 160. The ESC 115 may have a coatingor layer disposed thereon configured to inhibit current leakage andreduce particle contamination within the processing chamber 100. In oneexample, the coating or layer is a seasoning layer 220.

In an alternative embodiment, an RF filtering circuit may be used inaddition to or as an alternative to the isolation transformer 118. TheRF filtering circuit may be tuned to block out any parasitic RFcomponents that may interfere with the power source 117, thus maximizingthe chucking ability of the ESC 115. In one example, the RF filteringcircuit may include a 50 nF inductor which filters out HFRF atapproximately 13.56 MHz.

In one example, the ESC 115 may be a Johnsen-Rahbeck (JR) mono-polarchuck which utilizes JR forces rather than Coulombic forces to chuck asubstrate. When utilizing JR forces, chucking force increases with anincrease in contact area and/or an increase in effective voltage (e.g.,increased power supply and/or reduced leakage current). As describedbelow, seasoning layers can affect the leakage current, and thus, canaffect the chucking ability of an ESC.

FIG. 2 illustrates a sectional view of a seasoning layer 220, accordingto one embodiment of the disclosure. The seasoning layer 220 isillustrated disposed on a substrate support assembly 101. It is to beunderstood, however, that the seasoning layer 220 may be disposed onother internal surfaces of a processing chamber. The seasoning layer 220is a graded seasoning layer having a graded or tapered concentration ofone or more elements.

In one example, the seasoning layer 220 has a graded concentration ofboron. In such an example, the seasoning layer 220 has a greaterconcentration at a base portion 222 a of the seasoning layer 220 than ata top portion 222 b of the seasoning layer 220. While the seasoninglayer 220 is shown in FIG. 2 as having multiple sub-layers, it is to beunderstood that seasoning layer 220 is a single layer with a gradedcomposition that is continuously formed. The seasoning 220 may be aboron-carbon-nitrogen film having a composition of nitrogen within arange of about 1 mole percent (mol %) to 10 mol %, carbon within a rangeof about 20 mol % to about 50 mol %, and boron within a range of about80 mol % to about 90 mol % at the base portion 222 a to zero at the topportion 222 b. In one implementation, it is contemplated that theseasoning layer 220 may have a relatively constant boron concentrationin the base portion 222 a before beginning to taper the boronconcentration to zero in the top portion 222 b. In such an embodiment,the base portion 222 a may have a thickness of about 100 angstroms toabout 2,000 angstroms with a uniform concentration of boron, such asabout 85 mol % to about 95 mol %. After depositing the base portion 222a, the concentration of boron may taper downward to zero whilecontinuing to deposit a carbon-boron-nitride film having a totalthickness within a range of about 200 angstroms to about 20,000angstroms, such as about 200 angstroms to about 4,000 angstroms.

FIG. 3 is a flow a diagram of a method 390 for depositing a seasoninglayer, according to one embodiment of the disclosure. The method 390begins at operation 391. In operation 391, a cleaning operation isperformed. The cleaning operation is performed within a processingchamber, such a processing chamber 100, after an etch process,deposition process, or other process. The cleaning process removes anyparticle contaminants or previously-deposited chamber seasonings fromthe internal surfaces of the processing chamber. Suitable cleaning gasesmay include one or more of O₂, Ar, or NF₃, or radicals or ions thereof.

After evacuation of the cleaning gases, one or more precursor gases areintroduced into the processing chamber during operation 392 to depositthe base portion 222 a (shown in FIG. 2) of the seasoning layer 220. Theone or more precursor gases introduce boron, carbon, and nitrogen to theprocessing chamber. The one or more precursor gases may include acarbon-containing precursor, a nitrogen-containing precursor, and aboron-containing precursor. The one or more precursor gases may beintroduced to the processing chamber through the same or different gasinlets.

Example carbon-containing precursors include propylene, acetylene,ethylene, methane, hexane, isoprene, and butadiene, among others. Thecarbon-containing precursor gas may be introduced into the processchamber at a flow rate within a range of about 100 sccm to about 2,000sccm. Example nitrogen-containing precursors include pyridine, aliphaticamines, amines, nitriles, and ammonia, among others. Thenitrogen-containing precursor gas may be introduced into the processchamber at a flow rate within a range of about 500 sccm to about 15,000sccm. The boron-containing precursor may be initially introduced intothe processing chamber at a flow rate within a range of about 500 sccmto about 4,000 sccm. Example boron-containing precursors includediborane, orthocarborane, and trimethylborazine, among others. Duringoperation 392, a first portion of the seasoning layer 220 is formed. Thefirst portion of the seasoning layer 220 is an amorphous boron film. Theamorphous boron film is formed during a thermal decomposition of theprecursor gases. Because the boron-containing precursor dissociates muchmore easily than the carbon-containing and nitrogen-containingprecursors, the amorphous boron film formed during operation 392 may beabout 80 mol % to about 100 mol % boron, such as about 80 mol % to about90 mol %.

In operation 393, the flow rate of the boron-containing precursor isdecreased, and RF power is applied. The boron-containing precursor maybe initially introduced into the processing chamber at a flow ratewithin a range of about 500 sccm to about 4,000 sccm, and may be tapereddown to a flow rate of about zero. During the deposition of theseasoning layer 220, the flow rates of the carbon-containing precursorand the nitrogen-containing precursor may remain about constant, whilethe flow rate of the boron-containing precursor may be decreased duringformation of the seasoning layer 220. Simultaneously with the taperingof the boron-containing precursor, RF power is applied to ionize theprecursor gases. Because the RF power facilitates ionization of thenitrogen-containing precursor and the carbon-containing precursor, theportion of the seasoning layer 220 formed during operation 393 (e.g.,the top portion 222 b shown in FIG. 2) includes a higher concentrationof nitrogen and carbon than does the portion of the seasoning layer 220formed during operation 392 (e.g., the base portion 222 a). FIGS. 4A and4B illustrate examples of boron-containing precursor flow rates and RFpower application, respectively, for method 390.

FIG. 4A illustrates a graph 425 of a flow rate of a boron-containingprecursor gas during deposition of a seasoning layer, according to oneembodiment of the disclosure. At time t₀, a boron-containing precursorgas is introduced into a processing chamber at a constant flow ratewithin a range of 500 sccm to about 4,000 sccm. In the example shown inFIG. 4A, the boron-containing precursor is introduced at 1,000 sccm. Attime t₁, which may be in a range of about 5 seconds to about 30 secondsfrom time t₀, the flow rate of the boron-containing precursor gas beginsto taper off or decrease. In one example, time t₁ may coincide withoperation 393 shown in FIG. 3. The flow rate of the boron-containingprecursor is continuously decreased until time t₂, at which time theflow rate of the boron-containing precursor gas reaches zero. In oneexample, the difference between time t₁ and time t₂ is about 10 secondsto about 20 seconds. The difference between time t₁ and t₂ is selectedto provide a sufficient amount of boron in the seasoning layer 220 toreduce flaking of the seasoning layer 220, and to provide a sufficientamount of amorphous carbon to facilitate charge trapping of theseasoning layer 220. Charge trapping within the seasoning layer 220improves the electrostatic chucking performance of electrostatic chuckshaving the seasoning layer 220 thereon.

FIG. 4B illustrates a graph 426 of the application of high frequency RFpower during deposition of a seasoning layer, according to oneembodiment of the disclosure. RF power may be applied to the processingchamber to ionize one or more gases within the processing chamber. Inone example, no RF power is applied to the processing chamber betweentime t₀ and time t₁. The absence of RF power relies upon thermaldecomposition of the precursor gases to initially deposit the seasoninglayer. Thermal decomposition of the precursor gases facilitates adhesionof a seasoning layer to an underlying chamber component. At time t₁,coinciding with the tapering of the boron-containing precursor gas, RFpower at a constant level is applied to the processing chamber. Theapplication of RF power ionizes the one or more precursor gases tofacilitate the formation of amorphous material within the seasoninglayer 220. The boron-containing precursor gas is easily decomposed withthermal energy, however, the carbon-containing and nitrogen-containingprecursor gases may not decompose as easily. The applied RF powerfacilitates decomposition of the carbon-containing andnitrogen-containing precursors. RF power application continues to timet₂, at which time the deposition of the seasoning layer 220 isconcluded.

FIG. 5 is a graph 530 comparatively illustrating the particleperformance of a seasoning layer 220 of the present disclosure versusconventional seasoning layers. Graph 530 illustrates the number ofundesired particles having a size greater than 0.09 micrometers found ona 300 mm silicon substrate after performing a process on the substrate.The process may be, for example, an etch process, and performed in thepresence of each of the seasoning layers 531 a-531 h and 220 forcomparative purposes. The seasoning layer 531 a is a nitrogen-dopedamorphous carbon layer that is substantially free of boron. Theseasoning layer 531 a resulted in a particle count of about 130particles on the surface of the substrate after processing.

The seasoning layer 531 b is an amorphous boron layer. The seasoninglayer 531 b resulted in a particle count of about 45 particles on thesurface of the substrate after processing. The seasoning layer 531 c isa stacked seasoning layer having a first layer of amorphous boron, and asecond layer of nitrogen-doped amorphous carbon disposed on the firstlayer. The seasoning layer 531 c resulted in a particle count of about50 particles on the surface of the substrate after processing. Theseasoning layer 531 d is a boron-doped amorphous carbon layer having auniform concentration of boron throughout. In one example, thecomposition of the seasoning layer 531 d is about 50 mol % boron. Theseasoning layer 531 d resulted in a particle count of about 140particles on the surface of the substrate after processing.

The seasoning layer 531 e is an amorphous carbon layer which may beformed with a nitrogen precursor flow set point within a range of about500-1000 sccm and a boron precursor flow set point within a range ofabout 1000-2000 sccm. The seasoning layer 531 e resulted in a particlecount of about 190 particles on the surface of the substrate afterprocessing. The seasoning layer 531 f is an amorphous carbon layerformed using a nitrogen precursor flow set point within a range of about5,000-10,000 sccm and a boron precursor flow set point within a range ofabout 1,000-2,000 sccm. Thus, the seasoning layer 531 f has a greaternitrogen concentration than the seasoning layer 531 e. The seasoninglayer 531 f resulted in a particle count of about 105 particles on thesurface of the substrate after processing. The seasoning layer 531 g isan amorphous carbon layer formed using a nitrogen precursor flow setpoint within a range of about 5,000-10,000 sccm and a boron precursorflow set point within a range of about 500-1,000 sccm. Thus, theseasoning layer 531 g has a lower boron concentration than the seasoninglayer 531 f. The seasoning layer 531 g resulted in a particle count ofabout 70 particles on the surface of the substrate after processing.

The seasoning layer 531 h is an amorphous carbon layer formed using anitrogen precursor flow set point within a range of about 5,000-10,000sccm and boron flow set point which begins within a range of about500-1,000 sccm and tapers to 200 sccm. The seasoning layer 531 h may beformed using the boron gas flow profile of FIG. 4A. The seasoning layer531 h resulted in a particle count of about 80 particles on the surfaceof the substrate after processing. The seasoning layer 220 is formed asdescribed above. The seasoning layer 220 is an amorphous carbon filmformed using a nitrogen flow set point within a range of about5,000-10,000 sccm and a boron flow set point which begins at about500-1000 sccm and tapers to zero. The seasoning layer 531 h resulted ina particle count of about 35 particles on the surface of the substrateafter processing. For further comparison, in the absence of a seasoninglayer, a processed substrate will have a particle count in excess of250.

FIGS. 6A and 6B comparatively illustrate chucking performance of aseasoning layer of the present disclosure versus conventional seasoninglayers. FIG. 6A illustrates the normalized thickness of substrates(thickness of a planar substrate measured from a reference point versusthickness of a chucked substrate from the reference point) for 49 equalspace radial points across the substrate. The “baseline” illustrates athickness profile of a planar substrate chucked on a support. Therefore,substrates that are fully chucked will have a thickness profile whichmatches the baseline profile. As illustrated in FIG. 6A, each of theseasoning layers 531 a and 531 d result in planar chucking of thesubstrate. The graph for seasoning layer 220 is similar, although notshown. However, while each of the seasoning layers 531 a and 531 dresult in complete chucking of a substrate, each of the seasoning layers531 a and 531 d result in unsatisfactorily high particle counts onprocessed substrates, as shown in FIG. 5. Each of the seasoning layers531 b and 531 c have normalized thickness profiles illustrating aconcave curve of a substrate, indicating a partially-chucked substrate.

FIG. 6B illustrates the leakage current of the seasoning layer 220 ofthe present disclosure versus the leakage current of conventionalseasoning layers, 531 a, 531 b, and 531 d. As illustrated, the leakagecurrent of the seasoning layer 220 is significantly less than theleakage current of conventional seasoning layers 531 b and 531 d.Additionally, the leakage current of the seasoning layer 220 is within amagnitude of 10 of the conventional seasoning layer 531 a, whileproviding significantly better particle performance than theconventional seasoning layer 531 a, as shown in FIG. 5. Thus, theseasoning layer 220 is able to provide charge trapping or chuckingperformance about equal to the conventional seasoning layers, whilesignificantly reducing particle contamination on processed substrates.

FIG. 7A illustrates a substrate 750 a processed in a processing chamberseasoned with a conventional seasoning layer. FIG. 7B illustrates asubstrate 750 b processed in a processing chamber seasoned with aseasoning layer of the present disclosure. The substrate 750 a exhibitsa deposition ring 751 on a back surface 752 thereof. The deposition ring751 occurs due to concave bowing of the substrate 750 a duringprocessing, resulting from the inability of an electrostatic chuck tosecure the substrate 750 a in a planar configuration. In particular,because portions of the back surface 752 of the substrate 750 a areexposed during processing, material is able to deposit on the backsurface 752. As described above, conventional seasoning layers oftenhave inadequate charge trapping abilities (e.g., increased currentleakage) which negatively effects the electrostatic chucking performingof a chuck coated with conventional seasoning layers. The decreasedchucking performance results in portions of the back surface 752 of asubstrate 750 a being exposed during processing. The presence of thedeposition ring 751 negatively effects device performance, and in somecases, may result in a total loss of the substrate 750 a.

In contrast, the substrate 750 b in FIG. 7B was processed in aprocessing chamber seasoned with the seasoning layer 220 of the presentdisclosure. The seasoning layer 220 facilitates improved chuckingperformance via improved charge trapping compared to conventionalseasoning layers, even at temperatures in a range of about 300 degreesCelsius to about 650 degrees Celsius. Thus, the substrate 750 b, evenwith a bow of up to +1-400 micrometers, can be chucked and maintained ina planar configuration during processing. Because the substrate 750 b isplanar during processing, the substrate 750 b does not develop adeposition ring on the back surface thereof.

Benefits of the disclosed seasoning layers include reduced particlecontamination on substrates and improved charge trapping (e.g., reducedcurrent leakage). The disclosed seasoning layers include tapered boronconcentration profiles. A relatively higher boron concentration near abase of the seasoning layer facilities increased adhesion to chambercomponents, such as those made of aluminum oxide or aluminum nitride.The increased adhesion of the disclosed seasoning layers results inreduced particle contamination due to reduced flaking of the seasoninglayer. The relatively lower concentration of boron near the top portionof the seasoning layer results in increased charge trapping. Thus, theleakage current of the disclosed seasoning layer is decreased andchucking performance of a substrate support seasoned with the disclosedseasoning layer is improved.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

1. A method of depositing a seasoning layer, comprising: flowing a boronprecursor into a processing chamber for a first time period; forming abase portion of the seasoning layer during the first time period, thebase portion comprising amorphous boron; changing the flow rate ofthe-boron precursor during a second time period; and forming a topportion of the seasoning layer on the base portion during the secondtime period, the top portion having a higher concentration of carbon inthe top portion than in the base portion.
 2. The method of claim 1,wherein the boron precursor is thermally decomposed during the firsttime period.
 3. The method of claim 1, further comprising applying RFpower to the processing chamber during the second time period.
 4. Themethod of claim 1, further comprising forming a middle portion of theseasoning layer between the base portion and the top portion, the middleportion comprising a higher concentration of nitrogen than the baseportion.
 5. The method of claim 1, wherein the first time period iswithin a range of about 5 seconds to about 30 seconds.
 6. The method ofclaim 1, wherein the second time period is within a range of about 10seconds to about 20 seconds.
 7. The method of claim 1, furthercomprising introducing a cleaning gas into the processing chamber priorto introducing the boron precursor into a processing chamber, whereinthe cleaning gas comprises one or more of O₂, Ar, and NF₃.
 8. The methodof claim 1, wherein the boron precursor is selected from the groupconsisting of diborane, orthocarborane, and trimethylborazine.
 9. Themethod of claim 4, wherein the middle portion of the seasoning layer isformed during the second time period.
 10. The method of claim 1, whereina boron concentration at a surface of the seasoning layer is about zero.11. The method of claim 1, wherein the seasoning layer is deposited to athickness of about 200 angstroms to about 2,000 angstroms.
 12. A methodof chucking a substrate, comprising: forming a seasoning layer within aprocess chamber, comprising: flowing a boron precursor into a processingchamber for a first time period; forming a base portion of the seasoninglayer during the first time period, the base portion comprisingamorphous boron; changing the flow rate-of the boron precursor during asecond time period; and depositing a top portion of the seasoning layeron the base portion during the second time period, the top portionhaving a higher concentration of carbon in the top portion than in thebase portion; positioning a substrate on a support including anelectrostatic chuck within the processing chamber; and applying power tothe support to electrostatically chuck the substrate to the support. 13.The method of claim 12, wherein the substrate is a 300 mm silicon waferand has a bow of about +/−400 micrometers prior to applying power to thesupport, and is about planar after the power is applied to the support.14. The method of claim 12, wherein the seasoning layer is deposited toa thickness of about 200 angstroms to about 2,000 angstroms.
 15. Themethod of claim 14, further comprising forming a middle portion of theseasoning layer between the base portion and the top portion, the middleportion comprising a higher concentration of nitrogen than the baseportion.
 16. The method of claim 15, wherein the middle portion isformed during the second time period.
 17. The method of claim 14,wherein the boron precursor is thermally decomposed for the first timeperiod and an RF power is applied to the processing chamber for thesecond time period.
 18. A seasoning layer, comprising: aboron-carbon-nitrogen film, wherein the boron-carbon-nitrogen film has abase portion with a uniform boron concentration, and a top portionhaving a higher concentration of carbon than a carbon concentration inthe base portion.
 19. The seasoning layer of claim 18, wherein theboron-carbon-nitrogen film further comprises a middle portion betweenthe base portion and the top portion, the middle portion comprising ahigher concentration of nitrogen than the base portion.
 20. Theseasoning layer of claim 19, wherein a boron concentration at a surfaceof the top portion is about zero.